Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy
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چکیده
منابع مشابه
Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si„111... grown by selective area molecular beam epitaxy
We investigated the interwire distance dependence on the growth kinetics of vertical, high-yield InAs nanowire arrays on Si 111 grown by catalyst-free selective area molecular beam epitaxy MBE . Utilizing lithographically defined SiO2 nanomasks on Si 111 with regular hole patterns, catalyst-free and site-selective growth of vertically 111 -oriented InAs nanowires was achieved with very high yie...
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We report self-induced growth of vertically aligned (i.e. along the [111] direction), free-standing InAs nanowires on Si(111) substrates by solid-source molecular beam epitaxy. Implementation of an ultrathin amorphous SiO(x) mask on Si(111) facilitated epitaxial InAs nanowire growth, as confirmed by high-resolution x-ray diffraction 2theta-omega scans and transmission electron microscopy. Depen...
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Here we report the growth of phase-pure InAs nanowires on Si (111) substrates by molecular-beam epitaxy using Ag catalysts. A conventional one-step catalyst annealing process is found to give rise to InAs nanowires with diameters ranging from 4.5 to 81 nm due to the varying sizes of the Ag droplets, which reveal strong diameter dependence of the crystal structure. In contrast, a novel two-step ...
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تاریخ انتشار 2014